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TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES INYBa2Cu3OyTHIN FILMS GROWN ON SILICON WITH AEu2CuO4/Y-ZrO2BI-LAYER BUFFER

Author

Listed:
  • J. GAO

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong)

  • E. G. FU

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong)

  • Z. LUO

    (Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong)

  • Z. WANG

    (Department of Physics, Peking University, Beijing 100080, China)

  • D. P. YU

    (Department of Physics, Peking University, Beijing 100080, China)

Abstract

The microstructures in theYBa2Cu3Oyfilms grown onEu2CuO4/Y-ZrO2(YSZ) buffered silicon were studied by means of transmission electron microscopy. Our effort was emphasized on the influence of the interfacial microstructures on the formation and epitaxy of the grown layer. It was found that a nativeSi-oxide layer ~ 5 nm was formed at the boundary between YSZ and silicon. Such an intermediate layer should be formed after the initial formation of the grown YSZ layer as the epitaxy of YSZ still remain. The epitaxy can be kept through all layers without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the interfaces of YSZ/ECO and YBCO/ECO. The results demonstrate that the crystallinity and the epitaxy of YBCO have been greatly improved by the bi-layer buffer.

Suggested Citation

  • J. Gao & E. G. Fu & Z. Luo & Z. Wang & D. P. Yu, 2007. "TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES INYBa2Cu3OyTHIN FILMS GROWN ON SILICON WITH AEu2CuO4/Y-ZrO2BI-LAYER BUFFER," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 751-754.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010196
    DOI: 10.1142/S0218625X07010196
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