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THE ADSORPTION OFAuONSi(111)-7 × 7SURFACE: A FIRST-PRINCIPLES STUDY

Author

Listed:
  • YINGHUI ZHOU

    (Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China)

  • QI-HUI WU

    (Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China)

  • SHUPING LI

    (Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China)

  • JUNYONG KANG

    (Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China)

Abstract

The initial stage ofAuadsorption on theSi(111)-7 × 7surface has been investigated by the first-principles calculations. Different configurations have been considered and the high coordination sites were determined as the most possible places for theAuadsorption. The diffusion barriers forAuatoms on theSisurface have also been evaluated. The results indicated that theAuatoms could diffuse from the top of theSirest atoms to the high coordination sites only by overcoming a small barrier of 0.11 eV.

Suggested Citation

  • Yinghui Zhou & Qi-Hui Wu & Shuping Li & Junyong Kang, 2007. "THE ADSORPTION OFAuONSi(111)-7 × 7SURFACE: A FIRST-PRINCIPLES STUDY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 14(04), pages 657-660.
    • Handle: RePEc:wsi:srlxxx:v:14:y:2007:i:04:n:s0218625x07010020
    DOI: 10.1142/S0218625X07010020
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