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Preparation Of Indium Tin Oxide Films By Radio Frequency Magnetron Sputtering Under Low Vacuum Level

Author

Listed:
  • H. B. ZHU

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • X. D. LI

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • S. Y. HUANG

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • C. X. JIN

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • Z. SUN

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • Y. W. CHEN

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

  • S. M. HUANG

    (Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, North Zhongshan Road 3663, Shanghai 200062, China)

Abstract

Indium tin oxide (ITO) thin films were prepared by radio frequency (RF) magnetron sputtering and under a quite low vacuum level of2.3 × 10-3Pa. The sputtering was done in anArandO2gas mixture at a temperature of 200°C. A ceramicIn2O3:SnO2target (10 wt%SnO2) was used. The microstructures of the films were investigated by a field emission scanning electron microscope (FESEM) and an X-ray diffractometer (XRD). X-ray photoelectron spectroscopy (XPS) was performed to characterize the composition of the films. ITO films with a high transparency in the visible wavelength range (80–95%) were obtained. The dependency of the electrical, optical and structural properties of ITO films on both theO2flow ratio(O2/(O2+Ar))and the working pressure was investigated. In the case of low working pressure (1 Pa), the more highly transparent and conducting films were produced at the lowerO2flow ratio. High working pressure (2 Pa) gave rise to low quality, low transparency and amorphous films. Under RF sputtering at low vacuum level, the main contribution to the chamber atmosphere is due to water vapor. Oxygen originating from water vapor dissociation induced by plasma plays the same role as an oxygen or water vapor flux usually intentionally introduced in the system in order to have good quality films.

Suggested Citation

  • H. B. Zhu & X. D. Li & S. Y. Huang & C. X. Jin & Z. Sun & Y. W. Chen & S. M. Huang, 2006. "Preparation Of Indium Tin Oxide Films By Radio Frequency Magnetron Sputtering Under Low Vacuum Level," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(06), pages 833-840.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:06:n:s0218625x06008918
    DOI: 10.1142/S0218625X06008918
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