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The Electric Field Dependence Of The Photoionization Cross-Section Of Shallow Donor Impurities In Quantum Dots: Infinite And Finite Model

Author

Listed:
  • E. KASAPOGLU

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • H. SARI

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • U. YESILGUL

    (Cumhuriyet University, Physics Department, 58140 Sivas, Turkey)

  • I. SÖKMEN

    (Dokuz Eylül University, Physics Department İzmir, Turkey)

Abstract

Using a variational approach, we have calculated the photo-ionization cross-section of a shallow donor impurity in a quantum dot with finite and infinite potential barriers in the presence of an electric field as a function of the photon energy. Our calculations have revealed the dependence of the photoionization cross-section on the electric field, the size of the quantum dot and the impurity position.

Suggested Citation

  • E. Kasapoglu & H. Sari & U. Yesilgul & I. Sökmen, 2006. "The Electric Field Dependence Of The Photoionization Cross-Section Of Shallow Donor Impurities In Quantum Dots: Infinite And Finite Model," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(06), pages 747-752.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:06:n:s0218625x06008797
    DOI: 10.1142/S0218625X06008797
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