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A Novel Nanoporous Silicon Prepared Using Electrochemical Deposition Technique For Light Emitting Diode Applications

Author

Listed:
  • S. ABDULLAH

    (Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia)

  • M. RUSOP

    (Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia)

  • M. R. MUHAMAD

    (Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia)

Abstract

The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon(NPSi:Al)have been conducted. Nanoporous silicon(NPSi)layers have been prepared by anodically etching the unpolished p-typeSi[100] wafer with surface resistivity of 4–8 Ω cm-1in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum(Al)was doped onNPSiusing cathodic electrodeposition composed of aluminum chloride(AlCl3)and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparentAu/NPSi:Al/p-Si/Alohmic contact electrode showing rectification on a forward biasI–Vcurve. EL fromNPSiandNPSi:Al/p-Sihas also been observed using the diode structure. TheNPSi:Al/p-Sidevice shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed.

Suggested Citation

  • S. Abdullah & M. Rusop & M. R. Muhamad, 2006. "A Novel Nanoporous Silicon Prepared Using Electrochemical Deposition Technique For Light Emitting Diode Applications," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(05), pages 573-576.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:05:n:s0218625x06008517
    DOI: 10.1142/S0218625X06008517
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