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Shallow Donors In A Coupled Triple Graded Quantum Well Under The Electric And Magnetic Fields

Author

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  • E. KASAPOGLU

    (Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey)

  • H. SARI

    (Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey)

  • I. SÖKMEN

    (Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey;
    Department of Physics, Dokuz Eylül University, İzmir, Turkey)

Abstract

The binding energy of the donor in three different shaped triple gradedGaAs-(Ga,Al)Asquantum wells which is obtained by changing the depth of the central-well potential(Vo)is calculated by using a variational approach. The results have been obtained in the presence of uniform magnetic and electric fields applied along the growth direction as a function of the impurity position. In addition, we also give the binding energy of the hydrogenic donor impurity for triple square quantum wells having the same physical parameters with triple graded quantum well structures in order to see the effect of different geometric confinements on the donor impurity binding energy.

Suggested Citation

  • E. Kasapoglu & H. Sari & I. Sökmen, 2006. "Shallow Donors In A Coupled Triple Graded Quantum Well Under The Electric And Magnetic Fields," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(04), pages 397-401.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:04:n:s0218625x06008360
    DOI: 10.1142/S0218625X06008360
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    1. Morgan, Kenneth, 2003. "Africans and the Industrial Revolution in England: A Study in International Trade and Economic Development. By Joseph E. Inikori. Cambridge: Cambridge University Press, 2002, Pp. xxi, 576. £55.00, cl," The Journal of Economic History, Cambridge University Press, vol. 63(3), pages 875-876, September.
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