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BARRIER HEIGHT VARIATIONS AND INTERFACE PROPERTIES OFPtSi/SiSTRUCTURES

Author

Listed:
  • A. SELLAI

    (Department of Physics, Sultan Qaboos University, P.O. Box 36, Muscat 136, Oman)

  • P. DAWSON

    (School of Physics, Queen's University of Belfast, Belfast BT7 1NN, UK)

Abstract

To study some of the interfacial properties ofPtSi/Sidiodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation ofPtonSifollowed by annealing at different temperatures (from 400°C to 700°C) to formPtSi. ThePtSi/n-Sidiodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20–290 K) over which theI–Vcharacteristics were measured in the present study is broader with a much lower limit (20 K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance–voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide–silicon interface. The forwardC–Vcharacteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.

Suggested Citation

  • A. Sellai & P. Dawson, 2006. "BARRIER HEIGHT VARIATIONS AND INTERFACE PROPERTIES OFPtSi/SiSTRUCTURES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(02n03), pages 273-278.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x06008244
    DOI: 10.1142/S0218625X06008244
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