IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v13y2006i02n03ns0218625x0600813x.html
   My bibliography  Save this article

SIMS STUDIES OFCl-DOPEDZnSeEPILAYERS GROWN BY MBE

Author

Listed:
  • F. S. GARD

    (Department of Physics, Sultan Qaboos University, P. O. Box 36, Post Code 123, Sultanate of Oman;
    Department of Physics, La Trobe University, VIC. 3086, Australia)

  • J. D. RILEY

    (Department of Physics, La Trobe University, VIC. 3086, Australia)

  • K. PRINCE

    (Australian Nuclear Science and Technology Organization, Menai, NSW 2234, Australia)

Abstract

Chlorine is one of the most used species to produce n-typeZnSeepilayers. In this paper, we present Secondary Ion Mass Spectrometry (SIMS) profiles of a series ofCl-dopedZnSesamples, which were grown by Molecular Beam Epitaxy (MBE) technique onGaAssubstrates. These profiles have been used to examine the limitation of SIMS analysis of narrowCl-delta layers. In order to convert SIMS raw data to quantified data, the depth profile from aCl-implanted standard sample has been used to estimate the "useful ion yield" of chlorine and thus the instrumental sensitivity for chlorine in aZnSematrix. The "useful ion yield" and detection limit of chlorine in theZnSehost matrix were calculated to be4.7 × 10-7and5 × 1017atoms/cm3, respectively.

Suggested Citation

  • F. S. Gard & J. D. Riley & K. Prince, 2006. "SIMS STUDIES OFCl-DOPEDZnSeEPILAYERS GROWN BY MBE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 13(02n03), pages 215-220.
    • Handle: RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x0600813x
    DOI: 10.1142/S0218625X0600813X
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X0600813X
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X0600813X?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    More about this item

    Keywords

    SIMS; MBE; GaAs; ZnSe;
    All these keywords.

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:13:y:2006:i:02n03:n:s0218625x0600813x. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.