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DIAMOND DEPOSITION ONWC/CoALLOY WITH A MOLYBDENUM INTERMEDIATE LAYER

Author

Listed:
  • SHA LIU

    (School of Materials Science & Engineering, Central South University, Changsha, Hunan 410083, P. R. China)

  • ZHI-MING YU

    (School of Materials Science & Engineering, Central South University, Changsha, Hunan 410083, P. R. China)

  • DAN-QING YI

    (School of Materials Science & Engineering, Central South University, Changsha, Hunan 410083, P. R. China)

Abstract

It is known that in the condition of chemical vapor deposition (CVD) diamond process, molybdenum is capable of forming carbide known as the "glue" which promotes growth of the CVD diamond, and aids its adhesion by (partial) relief of stresses at the interface. Furthermore, theWCgrains are reaction bonded to theMo2Cphase. Therefore, molybdenum is a good candidate material for the intermediate layer betweenWC–Cosubstrates and diamond coatings. A molybdenum intermediate layer of 1–3 μm thickness was magnetron sputter-deposited onWC/Coalloy prior to the deposition of diamond coatings. Diamond films were deposited by hot filament chemical vapor deposition (HFCVD). The chemical quality, morphology, and crystal structure of the molybdenum intermediate layer and the diamond coatings were characterized by means of SEM, EDX, XRD and Raman spectroscopy. It was found that the continuousMointermediate layer emerged in spherical shapes and had grain sizes of 0.5–1.5 μm after 30 min sputter deposition. The diamond grain growth rate was slightly slower as compared with that of uncoatedMolayer on theWC–Cosubstrate. The morphologies of the diamond films on theWC–Cosubstrate varied with the amount ofMoandCoon the substrate. TheMointermediate layer was effective to act as a buffer layer for bothCodiffusion and diamond growth.

Suggested Citation

  • Sha Liu & Zhi-Ming Yu & Dan-Qing Yi, 2005. "DIAMOND DEPOSITION ONWC/CoALLOY WITH A MOLYBDENUM INTERMEDIATE LAYER," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(04), pages 499-504.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:04:n:s0218625x05007335
    DOI: 10.1142/S0218625X05007335
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