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SYNTHESIS AND PROPERTY STUDY OF NANOPARTICLE QUATERNARY SEMICONDUCTORSiCAlNFILMS WITH CO-SPUTTERING UNDER LOWER TEMPERATURE

Author

Listed:
  • SHIYONG HUANG

    (Physics Department of Yantai University, Yantai, 264005, P. R. China;
    Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • S. XU

    (Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • JIDONG LONG

    (Plasma Source and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Singapore)

  • ZHENHONG DAI

    (Physics Department of Yantai University, Yantai, 264005, P. R. China)

  • YUANPING SUN

    (Physics Department of Yantai University, Yantai, 264005, P. R. China)

Abstract

QuaternarySiCAlNnanoparticle films were produced by reactive rf magnetron co-sputtering technique with a chemically pureSiCand anAltarget under low temperature. The crystalline structure, surface morphology, and element content of the films were studied in terms of sputtering parameters. The element content and chemical states ofSiCAlNfilms were measured by means of energy dispersive X-ray fluorescence (EDX) and X-ray photoelectronic spectroscopy (XPS). Surface morphology ofSiCAlNfilms was investigated by FE-SEM.

Suggested Citation

  • Shiyong Huang & S. Xu & Jidong Long & Zhenhong Dai & Yuanping Sun, 2005. "SYNTHESIS AND PROPERTY STUDY OF NANOPARTICLE QUATERNARY SEMICONDUCTORSiCAlNFILMS WITH CO-SPUTTERING UNDER LOWER TEMPERATURE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(03), pages 397-400.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:03:n:s0218625x05007153
    DOI: 10.1142/S0218625X05007153
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