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THE PHYSICAL PROPERTIES OFXeClEXCIMER PULSED LASER DEPOSITEDn-C:P/p-SiPHOTOVOLTAIC SOLAR CELLS

Author

Listed:
  • M. RUSOP

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • T. SOGA

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

  • T. JIMBO

    (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Nagoya 466-8555, Showa-ku, Gokiso-cho, Japan)

Abstract

This paper reports on the successful deposition of phosphorus(P)-doped n-type(p-C:P)carbon(C)films, and fabrication ofn-C:P/p-Sicells by pulsed laser deposition (PLD) using graphite target at room temperature. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100mW/cm2, 25°C). Then-C:P/p-Sicell fabricated using a target with the amount ofPby 7 weight percentages (Pwt%) shows the highest energy conversion efficiencyη = 1.14%and fill factorFF= 41%. The quantum efficiency (QE) of then-C:P/p-Sicells are observed to improve with Pwt%. The dependence ofPcontent on the electrical and optical properties of the deposited films and the photovoltaic characteristics of then-C:P/p-Siheterojunction solar cell are discussed.

Suggested Citation

  • M. Rusop & T. Soga & T. Jimbo, 2005. "THE PHYSICAL PROPERTIES OFXeClEXCIMER PULSED LASER DEPOSITEDn-C:P/p-SiPHOTOVOLTAIC SOLAR CELLS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(02), pages 167-172.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:02:n:s0218625x05006895
    DOI: 10.1142/S0218625X05006895
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