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Physical Properties Ofauandalthin Films Measured By Resistive Heating

Author

Listed:
  • F. AVILÉS

    (Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida, Departamento de Física Aplicada, A. P. 73 — Cordemex, 97310, Mérida, Yucatán, México)

  • O. CEH

    (Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida, Departamento de Física Aplicada, A. P. 73 — Cordemex, 97310, Mérida, Yucatán, México)

  • A. I. OLIVA

    (Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida, Departamento de Física Aplicada, A. P. 73 — Cordemex, 97310, Mérida, Yucatán, México)

Abstract

The electrical resistivity (ρ), resistive thermal coefficient (αr), thermal expansion coefficient (αt) and stress (σ) ofAlandAuthin films deposited by thermal evaporation were measured while films were heated by Joule effect. Electrical resistivity measured by the four-probe technique was simultaneously measured with surface film temperature in real time.Aufilms show important variations in theαrand ρ properties when thickness ranged from 0.1μm to 1μm; contrarily,Alfilms show insignificant variations in the 0.1μm to 2γm thickness range. The role of the surface aluminum oxide on these measurements and the intrinsic stress on films determined with grazing incidence X-rays are discussed.

Suggested Citation

  • F. Avilés & O. Ceh & A. I. Oliva, 2005. "Physical Properties Ofauandalthin Films Measured By Resistive Heating," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 12(01), pages 101-106.
    • Handle: RePEc:wsi:srlxxx:v:12:y:2005:i:01:n:s0218625x05006834
    DOI: 10.1142/S0218625X05006834
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