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GROWTH, MORPHOLOGICAL AND STRUCTURAL PROPERTIES OFAgTHIN FILMS ON ARu(0001)SURFACE GROWN BY MBE

Author

Listed:
  • A. AZIZI

    (Laboratoire d'Energétique et d'Electrochimie du Solide, Université de Sétif, 19000, Algérie)

  • J. ARABSKI

    (Institut de Physique et Chimie des Matériaux de Strasbourg (UMR 7504 du CNRS), 23 rue du Loess, BP 43, F-67034 Strasbourg, France)

  • A. DINIA

    (Institut de Physique et Chimie des Matériaux de Strasbourg (UMR 7504 du CNRS), 23 rue du Loess, BP 43, F-67034 Strasbourg, France)

Abstract

Agthin films deposited onRu(0001)surface by molecular beam epitaxy, at temperatures of 20°C and 450°C, have been investigated using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. For both growth temperatures, thein situRHEED patterns of theAgfilms exhibited an in-plane six-fold symmetry, indicating that theAgdeposit is in epitaxy with theRubuffer surface. At RT, the RHEED technique indicated a three-dimensional growth (3D), while a layer-by-layer growth (2D) takes place at HT. The AFM images showed a granular structure of the surface of the depositedAglayers with a large variation of the roughness with the growth temperature. XRD analysis gave indication of a strongly textured thin film along the growth direction. The lattice mismatch between theAgandRuis at the origin of a stress at the interface and defects structure in the film.

Suggested Citation

  • A. Azizi & J. Arabski & A. Dinia, 2004. "GROWTH, MORPHOLOGICAL AND STRUCTURAL PROPERTIES OFAgTHIN FILMS ON ARu(0001)SURFACE GROWN BY MBE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(06), pages 563-568.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:06:n:s0218625x04006517
    DOI: 10.1142/S0218625X04006517
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