IDEAS home Printed from https://ideas.repec.org/a/wsi/srlxxx/v11y2004i04n05ns0218625x0400630x.html
   My bibliography  Save this article

STUDY OF TRAPPING RATE AND DEFECT DENSITY INAlSi11.35Mg0.23BY POSITRON ANNIHILATION TECHNIQUE

Author

Listed:
  • M. A. ABDEL-RAHMAN

    (Faculty of Science, Physics Department, El-Minia University, Egypt)

  • M. S. ABDALLAH

    (Faculty of Science, Physics Department, El-Minia University, Egypt)

  • EMAD A. BADAWI

    (Faculty of Science, Physics Department, El-Minia University, Egypt)

Abstract

The measurements of Positron Annihilation Lifetime Technique (PALT) have been performed onAlSi11.35Mg0.23Alloys. It has been shown that positrons can become trapped at imperfect locations in solids and their mean lifetime can be influenced by changes in the concentration of such defects. No change has been observed in the mean lifetime values at the saturation of defect concentration. The trapping rates of positrons can be determined for thickness reduction up to 11% for dislocation. The concentration of defect (ρ') range varies from8.65×1015to2.35×1018cm-3up to the maximum value of strain (ε) 0.23.

Suggested Citation

  • M. A. Abdel-Rahman & M. S. Abdallah & Emad A. Badawi, 2004. "STUDY OF TRAPPING RATE AND DEFECT DENSITY INAlSi11.35Mg0.23BY POSITRON ANNIHILATION TECHNIQUE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(04n05), pages 427-432.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:04n05:n:s0218625x0400630x
    DOI: 10.1142/S0218625X0400630X
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X0400630X
    Download Restriction: Access to full text is restricted to subscribers
    File URL: https://libkey.io/10.1142/S0218625X0400630X?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:11:y:2004:i:04n05:n:s0218625x0400630x. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.