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MICROCRACKS IN ~ 100 MeVSi7+-ION-IRRADIATEDp-SILICON SURFACES

Author

Listed:
  • O. P. SINHA

    (Department of Physics, Banaras Hindu University, Varanasi – 221 005, India)

  • P. C. SRIVASTAVA

    (Department of Physics, Banaras Hindu University, Varanasi – 221 005, India)

  • V. GANESAN

    (Inter University Consortium for Department of Atomic Energy Facilities, Indore – 452 017, India)

Abstract

The p-silicon surfaces have been irradiated with ~ 100 MeVSi7+ions to a fluence of2.2×1013ionscm-2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

Suggested Citation

  • O. P. Sinha & P. C. Srivastava & V. Ganesan, 2004. "MICROCRACKS IN ~ 100 MeVSi7+-ION-IRRADIATEDp-SILICON SURFACES," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(03), pages 265-269.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:03:n:s0218625x04006177
    DOI: 10.1142/S0218625X04006177
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