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CHARACTERIZATION OF SILICON OXIDE NANOWIRES DIRECTLY GROWN FROMNiO/Si

Author

Listed:
  • BYOUNGTAE PARK

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea)

  • KIJUNG YONG

    (Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea)

Abstract

Amorphous silicon oxide nanowires(a-SiONW's)were synthesized on aNiO-catalyzed silicon substrate through a simple thermal annealing at 1000–1100°C without any additional silicon source materials. The synthesized nanowires were highly pure (no metal catalyst contamination) and very long (hundreds of micrometers). Most nanowires had a diameter in the range of 50–100 nm. The nickel oxide nanoparticles play a peculiar role in the synthesis ofa-SiONW's. The growth ofa-SiONW'sis most likely controlled by the solid–liquid–solid (SLS) mechanism. IR absorption characteristics clearly showed bending (796 cm-1) and asymmetric stretching (1075 cm-1) modes ofSi–O–Sibonds ina-SiONW's. An extraordinary UV emission at 370 nm was observed froma-SiONW's, which could be attributed to defect centers of oxygen excess in the nanowires.

Suggested Citation

  • Byoungtae Park & Kijung Yong, 2004. "CHARACTERIZATION OF SILICON OXIDE NANOWIRES DIRECTLY GROWN FROMNiO/Si," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 11(02), pages 179-183.
    • Handle: RePEc:wsi:srlxxx:v:11:y:2004:i:02:n:s0218625x04005998
    DOI: 10.1142/S0218625X04005998
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