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Deposition and Characterization of High Dielectric Thin Films for Memory Device Application

Author

Listed:
  • Hyeong Joon Kim

    (School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea)

  • Ju Cheol Shin

    (School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea)

  • Cheol Seong Hwang

    (School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea)

  • Sang Yong No

    (School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea)

Abstract

(Pb,La)TiO3(PLT) andPb(Zr,Ti)O3(PZT) thin films were deposited onPt/SiO2/Sisubstrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited(Ba,Sr)TiO3(BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

Suggested Citation

  • Hyeong Joon Kim & Ju Cheol Shin & Cheol Seong Hwang & Sang Yong No, 2003. "Deposition and Characterization of High Dielectric Thin Films for Memory Device Application," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 10(04), pages 591-604.
    • Handle: RePEc:wsi:srlxxx:v:10:y:2003:i:04:n:s0218625x03005438
    DOI: 10.1142/S0218625X03005438
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