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PHOTOLUMINESCENCE STUDIES OF GaInArSbHIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb

Author

Listed:
  • J. DÍAZ-REYES

    (CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico)

  • E. CORONA-ORGANICHE

    (CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico)

  • J. L. HERRERA-PÉREZ

    (CICATA-IPN, Unidad Puebla, Acatlán 63, Col. La Paz, Puebla, Puebla 72160, Mexico)

  • O. ZARATE-CORONA

    (CIDS-BUAP, 14 sur y Av. San Claodio, Puebla, Puebla, 72570, Mexico)

  • J. MENDOZA-ALVAREZ

    (Depto. de Física, CINVESTAV-IPN, DF, 07000/Centro, Mexico)

Abstract

Tellurium-doped GaInArSb epitaxial layers with electron concentration in the range of3 × 1017– 2 × 1020cm-3are grown at 530°C on (100) GaSb substares by liquid phase epitaxy (LPE). To dope the layers we used pellets ofSb3Te2in preparing growth melts. The low temperature photoluminescence (PL) spectra (20 K) showed a dominant peak composed of three transitions associated to excitons bound to residual acceptor impurities. For highly Te-doped layers the excitonic transitions related to exciton bound to neutral acceptor,BE2, disappears.

Suggested Citation

  • J. Díaz-Reyes & E. Corona-Organiche & J. L. Herrera-Pérez & O. Zarate-Corona & J. Mendoza-Alvarez, 2002. "PHOTOLUMINESCENCE STUDIES OF GaInArSbHIGHLY DOPED WITH TELLURIUM GROWN BY LIQUID PHASE EPITAXY ON (100) GaSb," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(05n06), pages 1645-1649.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004141
    DOI: 10.1142/S0218625X02004141
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