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ELECTRONIC STRUCTURES OF THE METAL-TO-INSULATOR TRANSITION SYSTEM1T-TaSxSe2-xSTUDIED BY ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY

Author

Listed:
  • K. HORIBA

    (Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)

  • K. ONO

    (Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)

  • M. OSHIMA

    (Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)

  • Y. AIURA

    (National Institute of Advanced Idustrial Science and Technology, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan)

  • O. SHIINO

    (Data Storage Technology Center, TDK Corporation, 462-1 Odai, Saku-shi, Nagano 385-0009, Japan)

Abstract

We have investigated the electronic structures of metal-to-insulator transitions (MIT) due to charge-density-wave phase transition in1T-TaSxSe2-xby angle-resolved photoemission spectroscopy. In the insulating phase of the sample withx = 1.5, we observe a gap formation at the Fermi energy(EF), while in the metallic phase of the sample withx = 1.2, we do not observe a drastic change in the spectra between at room temperature and at low temperature. We observe a peak originating from the lower Hubbard band in the insulating phase of the sample withx = 1.5. In the metallic phase of the sample withx = 1.2, the peak intensity is smaller and the peak energy shifts nearEF, but the lower Hubbard band peak still remains. These results suggest that MIT in1T-TaSxSe2-xis due to the Mott localization.

Suggested Citation

  • K. Horiba & K. Ono & M. Oshima & Y. Aiura & O. Shiino, 2002. "ELECTRONIC STRUCTURES OF THE METAL-TO-INSULATOR TRANSITION SYSTEM1T-TaSxSe2-xSTUDIED BY ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(02), pages 1085-1089.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:02:n:s0218625x0200338x
    DOI: 10.1142/S0218625X0200338X
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