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Control Of Excitonic And Electron–Hole Processes In Wide-Gap Crystals By Means Of Elastic Uniaxial Stress

Author

Listed:
  • A. LUSHCHIK

    (Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia)

  • CH. LUSHCHIK

    (Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia)

  • E. VASIL'CHENKO

    (Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia)

  • M. KIRM

    (II. Institute of Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany)

  • I. MARTINSON

    (Department of Physics, Lund University, Box 118, SE-221 00 Lund, Sweden)

Abstract

The time-resolved emission spectra and the excitation spectra of the main emissions have been measured for the first time in stressed and unstressed RbI crystals using synchrotron radiation of 10–30 eV at 8 K. It has been shown that the applied elastic uniaxial stress (EUS) offers promise for the separation of the elementary multiplication mechanisms of electronic excitations. A different influence of EUS on the self-trapping of excitons or holes at 8 K has been discussed. The mean free path of free excitons decreases, while that of valence holes increases in a stressed RbI crystal.

Suggested Citation

  • A. Lushchik & Ch. Lushchik & E. Vasil'Chenko & M. Kirm & I. Martinson, 2002. "Control Of Excitonic And Electron–Hole Processes In Wide-Gap Crystals By Means Of Elastic Uniaxial Stress," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 9(01), pages 299-304.
    • Handle: RePEc:wsi:srlxxx:v:09:y:2002:i:01:n:s0218625x02002221
    DOI: 10.1142/S0218625X02002221
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