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SITE-SPECIFIC SURFACE CHEMISTRY OFGaAs(001)

Author

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  • L. LI

    (Department of Physics and Laboratory for Surface Study, University of Wisconsin, Milwaukee, WI 53201, USA)

Abstract

In this article, we summarize our studies of the surface chemistry of gallium arsenide as it pertains to the metal organic chemical vapor deposition of compound semiconductors. It has been found by scanning tunneling microscopy and vibrational spectroscopy that the adsorption of reactant molecules on reconstruted GaAs (001) surfaces is "site-specific." The adsorption sites on the semiconductor surface are revealed by the vibrational spectrum of adsorbed hydrogen. Studies of arsine adsorption have shown that it dissociatively adsorbs only on gallium sites and transfers hydrogen to the neighboring As atom. Studies of carbon doping with carbon tetrachloride have shown that adsorbed chlorine attacks the exposed gallium and generates volatileGaClxspecies. The site-specific nature of this reaction leads to a dramatic change in the film morphology, with the formation of etch pits primarily distributed along the step edges.

Suggested Citation

  • L. Li, 2000. "SITE-SPECIFIC SURFACE CHEMISTRY OFGaAs(001)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 625-629.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000786
    DOI: 10.1142/S0218625X00000786
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