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MORPHOLOGICAL CONTROL OFGaNBUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON6H–SiC(0001)

Author

Listed:
  • CHANGWU HU

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

  • DAVID J. SMITH

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

  • R. B. DOAK

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

  • I. S. T. TSONG

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA)

Abstract

The growth of GaN buffer layers of thickness 10–25 nm directly on6H–SiC(0001)substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3flux came from a seeded beam supersonic jet source. By monitoring the growthin situand by suitably adjusting theGa/NH3flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the6H–SiC(0001)substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Suggested Citation

  • Changwu Hu & David J. Smith & R. B. Doak & I. S. T. Tsong, 2000. "MORPHOLOGICAL CONTROL OFGaNBUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON6H–SiC(0001)," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(05n06), pages 565-570.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:05n06:n:s0218625x00000701
    DOI: 10.1142/S0218625X00000701
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