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Transmission Resonances In Magnetic Structures Based On Narrow-Gap Semiconductors

Author

Listed:
  • M. MALKOVA

    (Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova)

  • F. DOMINGUEZ-ADAME

    (Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, E-28040 Madrid, Spain)

Abstract

In this work we are concerned with magnetic junction structures in which a homogeneous narrow-gap semiconductor is subjected to an inhomogeneous magnetic field, in an attempt to elucidate the band-structure effect on the resonance tunneling. Careful investigation of the transmission as a function of the energy shows that the resonances in the spectrum can appear. These are remnants of the Landau levels localized near the interface boundary. Comparing the solutions obtained within two-band and single-band models we found the allowed values of the momentum to be quite different, resulting in different resonant values of the transmission coefficient of electron transport through the magnetic interface.

Suggested Citation

  • M. Malkova & F. Dominguez-Adame, 2000. "Transmission Resonances In Magnetic Structures Based On Narrow-Gap Semiconductors," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 7(01n02), pages 123-126.
    • Handle: RePEc:wsi:srlxxx:v:07:y:2000:i:01n02:n:s0218625x00000166
    DOI: 10.1142/S0218625X00000166
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