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THE GROWTH AND ELECTRONIC STRUCTURES OF EPITAXIALCrSi2FILMS PREPARED ON Si(111) SUBSTRATE

Author

Listed:
  • K. H. KIM

    (Department of Physics, Gyeongsang National University, Chinju 660-701, Korea)

  • J.-S. KANG

    (Department of Physics, The Catholic University of Korea, Pucheon 422-743, Korea)

  • C. G. OLSON

    (Ames Laboratory, Iowa State University, AMES, Iowa 50011, USA)

Abstract

Highly epitaxialCrSi2films were grown on Si(111) substrate by Cr deposition on Si(111)-(7×7) surface at 450°C followed byin situannealing at 900–1100°C in ultrahigh vacuum.CrSi2(001)plane was grown parallel to the Si(111) plane with aCrSi2 //Si matching face relationship. The valence band (VB photoemission for the 1200-Å-thickCrSi2was measured at room temperature and 20 K by using synchrotron radiation (hν=20–120 eV). Overall shapes of the two energy distribution curves (EDC's) were similar. Two peaks were observed in the EDC's corresponding to the bonding and the nonbondingCr-dstates in theCrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap opening at low temperature.

Suggested Citation

  • K. H. Kim & J.-S. Kang & C. G. Olson, 1999. "THE GROWTH AND ELECTRONIC STRUCTURES OF EPITAXIALCrSi2FILMS PREPARED ON Si(111) SUBSTRATE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 1103-1108.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001220
    DOI: 10.1142/S0218625X99001220
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