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DC-HEATING-INDUCED ANTIBAND FORMATION AND SUBSEQUENT STEP WANDERING ON Si(111) STUDIED BYIN-SITUREM

Author

Listed:
  • MASASHI DEGAWA

    (Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan)

  • HIROKI MINODA

    (Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan)

  • YASUMASA TANISHIRO

    (Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan)

  • KATSUMICHI YAGI

    (Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan)

Abstract

Direct current fed through a Si crystal with (111) vicinal surfaces induces step bunching and wandering which depend on the temperature and the current direction. In the present reportin-situreflection electron microscope studies of antiband formation and the growth of step wandering are presented together with supplemental observations by scanning electron microscopy and optical microscopy. Observations were for the temperature range (about 1000–1180°C) where the step-down current induces step wandering and the step-up current induces step bunching and antiband formation and subsequent step wandering. An important role of antiband formation for step wandering in the step-up current regions is presented.

Suggested Citation

  • Masashi Degawa & Hiroki Minoda & Yasumasa Tanishiro & Katsumichi Yagi, 1999. "DC-HEATING-INDUCED ANTIBAND FORMATION AND SUBSEQUENT STEP WANDERING ON Si(111) STUDIED BYIN-SITUREM," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(06), pages 977-984.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001050
    DOI: 10.1142/S0218625X99001050
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