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Spin-Polarized Vacuum Tunneling: Correlation Of Electronic And Magnetic Properties On The Nanometer Scale

Author

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  • M. GETZLAFF

    (Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany)

  • M. BODE

    (Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany)

  • R. WIESENDANGER

    (Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany)

Abstract

The realization of spin-polarized vacuum tunneling is demonstrated for the Gd(0001) surface, which is ideally suited since it exhibits a surface state that is exchange-split into two parts with opposite spin polarization. Both appear as distinct features in the tunneling spectra. The use of ferromagnetic probe tips leads to magnetic-field-dependent asymmetries in the differential tunneling conductivity at bias voltages which correspond to the energies of the spin components. By mapping the asymmetry parameter we can image the magnetic domain structure of the sample. The spin polarization of the differential tunneling conductivity is found to be in excellent agreement with (inverse) photoemission data.

Suggested Citation

  • M. Getzlaff & M. Bode & R. Wiesendanger, 1999. "Spin-Polarized Vacuum Tunneling: Correlation Of Electronic And Magnetic Properties On The Nanometer Scale," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(05), pages 591-597.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:05:n:s0218625x99000548
    DOI: 10.1142/S0218625X99000548
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