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ENERGETICS OF BORON IN THESi(111)-$(\sqrt{3}\times \sqrt{3})$-B SURFACE PHASE AND IN SUBSURFACE SILICON LAYERS

Author

Listed:
  • V. G. ZAVODINSKY

    (Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia;
    Far Eastern State University, 8 Sukhanova Str., 690600 Vladivostok, Russia)

  • E. N. CHUKUROV

    (Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia;
    Far Eastern State University, 8 Sukhanova Str., 690600 Vladivostok, Russia)

  • I. A. KUYANOV

    (Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia)

Abstract

The energetics of the boron substitution in the B/Si(111)-$({$\sqrt{3}\times \sqrt{3}$})$surface phase and in subsurface silicon layers has been studied using the semiempirical cluster method AM1. It has been found that the boron energy in the second layer (theB-S5site) is about 1 eV lower than in the adatom position (theB-T4site) and about 2 eV lower than in the fourth bulklike layer. The latter value may be interpreted as the surface segregation energy (enthalpy). The barrier height for theB-T4–B-S5transfer has been found to be about 0.7 eV.

Suggested Citation

  • V. G. Zavodinsky & E. N. Chukurov & I. A. Kuyanov, 1999. "ENERGETICS OF BORON IN THESi(111)-$(\sqrt{3}\times \sqrt{3})$-B SURFACE PHASE AND IN SUBSURFACE SILICON LAYERS," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 6(01), pages 127-132.
    • Handle: RePEc:wsi:srlxxx:v:06:y:1999:i:01:n:s0218625x99000159
    DOI: 10.1142/S0218625X99000159
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