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LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon

Author

Listed:
  • J. B. Hannon

    (Sandia National Laboratories, Albuquerque, NM 87185-1413, USA)

  • B. S. Swartzentruber

    (Sandia National Laboratories, Albuquerque, NM 87185-1413, USA)

  • G. L. Kellogg

    (Sandia National Laboratories, Albuquerque, NM 87185-1413, USA)

  • N. C. Bartelt

    (Sandia National Laboratories, Livermore, CA 94551, USA)

Abstract

We have used the low energy electron microscope (LEEM) to investigate step faceting and striped phase formation on heavily boron-doped Si(001) surfaces. Measurements of thermal fluctuations along the steps, equilibrium island shapes, and the angle of triangular facets provide quantitative information on the step formation energies. We find that a simple, systematic temperature dependence of the spatial anisotropy of the free energy of isolated steps is sufficient to account for the observed faceting of the B type steps. These results suggest that the proliferation of straight A step edges at lower temperature is caused by the energy of isolated A steps becoming vanishingly small. We show that rapid cooling of the samples leads to the nucleation and growth of a high density of vacancy islands on the surfaces. Based on these results, we propose a qualitative model for mass transport during stripe formation.

Suggested Citation

  • J. B. Hannon & B. S. Swartzentruber & G. L. Kellogg & N. C. Bartelt, 1998. "LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(06), pages 1159-1165.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:06:n:s0218625x98001493
    DOI: 10.1142/S0218625X98001493
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