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Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy

Author

Listed:
  • Ayahiko Ichimiya

    (Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan)

  • Yoriko Tanaka

    (Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan)

  • Kazuhiko Hayashi

    (Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan)

Abstract

Single silicon islands have been produced on the Si(111)(7 × 7) surface by a scanning tunneling microscope (STM) tip. Thermal relaxation of the isolated islands is observed by temperature variable scanning tunneling microscopy with strong tip effects. The sizes of islands depend on timetwith a functional form of(t0-t)α. It is found thatα≃2/3for single bilayer islands, andα≃1for three-dimensional ones. During the decomposition of three-dimensional islands, step bunching of over-layers takes place, while the islands have certain facets, like a pyramid just after the creation. At the final stages of the three-dimensional island decompositions, two-dimensional ones with 5 × 5 structure always appear. We have found that characteristic 5 × 5 islands with a long lifetime are formed during relaxation, but the 7 × 7 islands have mostlt a short lifetime. Rotation of small islands is also observed during relaxation. We discuss the results in terms of two-dimensional vapor phase processes.

Suggested Citation

  • Ayahiko Ichimiya & Yoriko Tanaka & Kazuhiko Hayashi, 1998. "Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(03n04), pages 821-832.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x98001195
    DOI: 10.1142/S0218625X98001195
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    ; 61.61.Ch; 68.35.Bs; 68.35.Ja; 68.55.Eg;
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