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Surface Structures and Growth Mode of Cu/Si(100) Surfaces Observed by Scanning Tunneling Microscopy

Author

Listed:
  • H. Itoh

    (Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan)

  • T. Ann

    (Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan)

  • T. Kawasaki

    (Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan)

  • T. Ichinokawa

    (Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan)

Abstract

The surface structures and growth mode of the Cu/Si(100) quenched surfaces have been studied by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM), and the superstructures of 6 × 2, 2 × 2 and c(12 × 10) were observed by LEED mixed with 2 × 1. The combination of these structures depends on segregated Cu coverage which is a function of quenching temperature and deposited Cu coverage. These structures have been analyzed by STM and it has been found that 6 × 2 is an ordered structure of Si missing dimmer defects and 2 × 2 and c(12 × 10) are structures formed by Cu–Si layers with incorporation of Cu atoms into the Si(100) surface. The c(12 × 10) structure was analyzed in detail by STM with changing bias voltage, and a result of the structure model of c(12 × 10) has been proposed, The superstructures on the Cu/Si(100) surfaces do not grow homogeneously, and form the combined domains of these structures, Such a growth mode depending on Cu coverage and quenching temperature is discussed referring to the other metal surfaces on Si.

Suggested Citation

  • H. Itoh & T. Ann & T. Kawasaki & T. Ichinokawa, 1998. "Surface Structures and Growth Mode of Cu/Si(100) Surfaces Observed by Scanning Tunneling Microscopy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(03n04), pages 747-753.
  • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:03n04:n:s0218625x98001122
    DOI: 10.1142/S0218625X98001122
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