Author
Listed:
- J. C. Bruna
(SERMEC, Case 261, Faculté des Sciences et Techniques de Saint-Jérôme, 13397 Marseille, Cedex 20, France)
- M. Gillet
(SERMEC, Case 261, Faculté des Sciences et Techniques de Saint-Jérôme, 13397 Marseille, Cedex 20, France)
- V. Gonzales
(Department of Electronics and Vacuum Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, 180 00 Prague 8, Republic of Czech)
- K. Masek
(Department of Electronics and Vacuum Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, 180 00 Prague 8, Republic of Czech)
- V. Matolín
(Department of Electronics and Vacuum Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, 180 00 Prague 8, Republic of Czech)
Abstract
Three-dimensional Pd particles were prepared by heteroepitaxial growth on NaCl (001) andα-Al2O3(0001) substrates. During the deposition the particle structure and orientation were characterized by reflection high energy electron diffraction. It was shown that the particle epitaxial planes conserved the substrate surface symmetry — hexagonal or cubic. A CCD camera and a computer data treatment system were used for precise investigation of lattice parameter variation given by the particle interaction with the substrates. It was found that generally the lattice parameter parallel to the substrate remained constant due to the particle accommodation to the substrate while the perpendicular lattice parameter varied with particle size. Particle size was investigated by transmission electron microscopy.
Suggested Citation
J. C. Bruna & M. Gillet & V. Gonzales & K. Masek & V. Matolín, 1998.
"RHEED Study of Pd Particle Growth on α-Alumina and NaCl Substrates,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 403-408.
Handle:
RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000748
DOI: 10.1142/S0218625X98000748
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000748. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.