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Adsorption of Al on GaN(110) Surface

Author

Listed:
  • Jianjun Xie

    (Department of Physics, Fudan University, Shanghai 200433, P. R. China)

  • Jiang Ping

    (Department of Physics, Fudan University, Shanghai 200433, P. R. China)

  • Kaiming Zhang

    (Department of Physics, Fudan University, Shanghai 200433, P. R. China)

  • Xide Xie

    (Department of Physics, Fudan University, Shanghai 200433, P. R. China)

Abstract

The electronic properties of Al deposited on GaN(110) surface with different adsorption geometries have been studied by using the surface linear muffin tin orbital approach. The layer projected density of states for Al-covered GaN(110) surface is calculated and compared with that of the clean surface. The charge distribution before and after the adsorption of Al are investigated. It is found that the deposited Al atoms prefer to bond with the surface N atoms with some charge transferred from Al to the GaN substrate. Finally, the Al-Ga exchange mechanism is also studied and it is found that the adsorbed Al may replace the second layer Ga atom to form a more stable configuration.

Suggested Citation

  • Jianjun Xie & Jiang Ping & Kaiming Zhang & Xide Xie, 1998. "Adsorption of Al on GaN(110) Surface," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 269-272.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000499
    DOI: 10.1142/S0218625X98000499
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