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Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology

Author

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  • F. Semond

    (Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
    Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France)

  • L. Douillard

    (Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
    Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France)

  • P. Soukiassian

    (Commissariat à l'Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d'Etudes de Saclay, 9119 and 1 Gif sur Yvette Cedex, France;
    Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France)

  • A. Mayne

    (Laboratoire de Photophysique Moléculaire, Bâtiment 213, Université de Paris-Sud, 91405 Orsay Cedex, France)

  • G. Dujardin

    (Laboratoire de Photophysique Moléculaire, Bâtiment 213, Université de Paris-Sud, 91405 Orsay Cedex, France)

  • L. Di Cioccio

    (LETI (CEA-Technologies Avancées), DMEL, CEN/G, 85 X, 38041 Grenoble Cedex, France)

  • C. Jaussaud

    (LETI (CEA-Technologies Avancées), DMEL, CEN/G, 85 X, 38041 Grenoble Cedex, France)

Abstract

We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the3×2array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a3×2arrangement at a 1/3 Si mon/layer coverage.

Suggested Citation

  • F. Semond & L. Douillard & P. Soukiassian & A. Mayne & G. Dujardin & L. Di Cioccio & C. Jaussaud, 1998. "Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 207-211.
    • Handle: RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000384
    DOI: 10.1142/S0218625X98000384
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