Author
Listed:
- Ja-Yong Koo
(Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)
- Jae-Yel Yi
(Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)
- Chanyong Hwang
(Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)
- Dal-Hyun Kim
(Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)
- Sekyung Lee
(Korea Research Institute of Standards and Science, PO Box 102, Yusong, Taejon 305-600, Korea)
- Young-Jo Ko
(Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea)
- K. J. Chang
(Department of Physics, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea)
- Dong-Hyuk Shin
(Department of Physics, Dongguk University, Pildong 3-26, Chung-Ku, Seoul 100-715, Korea)
Abstract
The structure of a clean Si(100) and a Ni-contaminated si(100) was investigated using scanning tunneling microscopy. The clean Si (100) shows the2 × 1reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces2 × nreconstructions. The formation of vacancy clusters is favored. A rebondedSBstep is preferred on the clean Si(100) while a nonrebondedSBstep with a split-off dimer is mainly observed on the Ni-contaminated Si(100) and in the vicinity of dimer vacancies of the lower terrace on the clean Si(100).
Suggested Citation
Ja-Yong Koo & Jae-Yel Yi & Chanyong Hwang & Dal-Hyun Kim & Sekyung Lee & Young-Jo Ko & K. J. Chang & Dong-Hyuk Shin, 1998.
"Atomic Structure of Si(100) Surfaces,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 5(01), pages 1-4.
Handle:
RePEc:wsi:srlxxx:v:05:y:1998:i:01:n:s0218625x98000037
DOI: 10.1142/S0218625X98000037
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