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Direct Measurements Of Surface Stress Using Transmission Electron Microscopy

Author

Listed:
  • R. D. TWESTEN

    (Department of Physics, University of Illinois, 104 s. Goodwin Ave, Urbana, IL 61801, USA)

  • J. M. GIBSON

    (Department of Physics, University of Illinois, 104 s. Goodwin Ave, Urbana, IL 61801, USA)

  • O. C. HELLMAN

    (NTT Basic Research Laboratory, Tokyo, Japan)

Abstract

Surface stress and energy are concepts which are often misunderstood. In this work, we will clarify the difference between the two. We describe the use of transmission electron microscopy to measure surface stress by quantitative analysis of strain contrast images. We find that images of surface-stress-induced strain fields can be used to measure quantitative differences in surface stress provided the imaging parameters are accurately determined. We have applied this method to measure the stress difference between the7×7and high temperature "1×1" phases of the Si(111) surface at the phase coexistence temperature and between metastable phase boundaries on the Si(111) and amorphous-Ge interface. We discuss the significance of these measurements and pitfalls to be avoided in image simulations.

Suggested Citation

  • R. D. Twesten & J. M. Gibson & O. C. Hellman, 1997. "Direct Measurements Of Surface Stress Using Transmission Electron Microscopy," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 4(02), pages 245-269.
    • Handle: RePEc:wsi:srlxxx:v:04:y:1997:i:02:n:s0218625x97000249
    DOI: 10.1142/S0218625X97000249
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