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ELECTRONIC STRUCTURE OF THE CRYSTALLINE SILICON/n-FOLDSiO2RING INTERFACE

Author

Listed:
  • V.G. ZAVODINSKY

    (Insitute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio str, 690041, Vladivostok, Russia)

  • I.A. KUYANOV

    (Research Physical and Technical Institute, Far Eastern State University, 25 Uborevicha str., 690600, Vladivostok, Russia)

Abstract

Using theab initiolocal density approach we have studied the electronic structure of the systems consisting of the six-, four- and three-fold planarSiO2rings placed upon the surface of the silicon cluster. The interaction of the six- and four-fold rings with the silicon surface changes the electronic structure of the silica particle very weakly and the surface insulator band gap of 7–8 eV remains in their densities of states. The electronic structure of the three-fold planar ring undergoes a significant reconstruction. Its surface band gap is 3.7 eV instead of 7.6 eV for the free particle case. Two groups of the interfacial states were found inside the silicon semiconductor band gap.

Suggested Citation

  • V.G. Zavodinsky & I.A. Kuyanov, 1996. "ELECTRONIC STRUCTURE OF THE CRYSTALLINE SILICON/n-FOLDSiO2RING INTERFACE," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(03), pages 1403-1407.
  • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:03:n:s0218625x96002412
    DOI: 10.1142/S0218625X96002412
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