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Leem/Stm Studies Of Nonreactive And Reactive Growth On Silicon Surfaces

Author

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  • I. S. T. TSONG

    (Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287–1504, USA)

Abstract

The nucleation and growth behavior of two very different systems are studied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). The first is a nonreactive system of Pb growth on theSi(100)surface at room temperature and the second is a reactive system in which nitride layers are formed onSi(111)during reaction withNH3at high temperatures. In both cases, the mobilities of the diffusing species have a strong influence on the resulting growth morphologies.

Suggested Citation

  • I. S. T. Tsong, 1996. "Leem/Stm Studies Of Nonreactive And Reactive Growth On Silicon Surfaces," Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 3(02), pages 1305-1314.
    • Handle: RePEc:wsi:srlxxx:v:03:y:1996:i:02:n:s0218625x9600231x
    DOI: 10.1142/S0218625X9600231X
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