Author
Listed:
- V. YU. ARISTOV
(CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France;
UFR Sciences de la Matière, Université de Provence, Marseille, France;
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia)
- G. LE LAY
(CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France;
UFR Sciences de la Matière, Université de Provence, Marseille, France)
- M. GREHK
(Department of Physics, Royal Institute of Technology, 10044 Stockholm, Sweden)
- V.M. ZHILIN
(Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia)
- A. TALEB-IBRAHIMI
(LURE, Université de Paris-Sud, Bâtiment 209 D, 91405 Orsay Cedex, France)
- G. INDLEKOFER
(LURE, Université de Paris-Sud, Bâtiment 209 D, 91405 Orsay Cedex, France)
- P. SOUKIASSIAN
(Commissariat à l’Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d’Etudes de Saclay, 91191 Gif sur Yvette Cedex, France;
Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France)
Abstract
We present the first clear evidence of electron emission arising directly from a quantized two-dimensional electron channel from theInAs(110)surface covered by a few Cs atoms (≈ 0.01 Cs ML). Spectral features observed by photoemission spectroscopy using synchrotron radiation reveal discrete-energy electronic states resulting from quantization in the direction normal to the surface. The electron photoemission originates from the vicinities of$\bar{\Gamma}$points in the first and second surface Brillouin zones corresponding to the bottom of the conduction band. These findings are in agreement with self-consistent theoretical energy-level calculations using a jellium-like model.
Suggested Citation
V. Yu. Aristov & G. Le Lay & M. Grehk & V.M. Zhilin & A. Taleb-Ibrahimi & G. Indlekofer & P. Soukiassian, 1995.
"CESIUM-INDUCED QUANTIZED 2D ELECTRON CHANNEL ON THEInAs(110)SURFACE,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(06), pages 723-729.
Handle:
RePEc:wsi:srlxxx:v:02:y:1995:i:06:n:s0218625x95000650
DOI: 10.1142/S0218625X95000650
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