Author
Listed:
- I. BARTOŠ
(Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic)
- P. JAROŠ
(Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic)
- A. BARBIERI
(Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA)
- M.A. VAN HOVE
(Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720, USA)
- W.F. CHUNG
(Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
- Q. CAI
(Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
- M.S. ALTMAN
(Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
Abstract
Very-low-energy electron diffraction (VLEED) intensities from a cleanCu(111)surface have been measured in detail in the energy range 15–100 eV by low-energy electron microscope (LEEM). This enabled the elimination of possible disturbances due to stray magnetic fields. Corresponding theoreticalI–Vcurves have been obtained in good agreement with experimental data when an image-type surface barrier and anisotropy of the electron attenuation were taken into account. The reliability factor analysis indicates a slight expansion of the topmost interatomic spacing ofCu(111)relative to its bulk value.
Suggested Citation
I. Bartoš & P. Jaroš & A. Barbieri & M.A. Van Hove & W.F. Chung & Q. Cai & M.S. Altman, 1995.
"Cu(111)SURFACE RELAXATION BY VLEED,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 2(04), pages 477-482.
Handle:
RePEc:wsi:srlxxx:v:02:y:1995:i:04:n:s0218625x95000431
DOI: 10.1142/S0218625X95000431
Download full text from publisher
As the access to this document is restricted, you may want to search for a different version of it.
Corrections
All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:srlxxx:v:02:y:1995:i:04:n:s0218625x95000431. See general information about how to correct material in RePEc.
If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.
We have no bibliographic references for this item. You can help adding them by using this form .
If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.
For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/srl/srl.shtml .
Please note that corrections may take a couple of weeks to filter through
the various RePEc services.