Author
Listed:
- N.V. DOBRODEY
(Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio 5, 690041, Vladivostok, Russia)
- L.I. ZIEGELMAN
(Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio 5, 690041, Vladivostok, Russia)
- V.G. ZAVODINSKY
(Institute of Automation and Control Processes, Far Eastern Division of Russian Academy of Sciences, Radio 5, 690041, Vladivostok, Russia)
- I.A. KUYANOV
(Physical and Technical Institute, Far Eastern State University, Uborevitcha 25, 690600, Vladivostok, Russia)
Abstract
The nonempirical discrete-variational method of local density approximation was used to study the electronic structure and the most stable position of a single Au atom for the Si(111)–Au chemisorption system. Only the symmetric adsorption sites (H3,T4, "on-top") were considered. The three fold hollow site has been found to be energetically the most favorable position with the vertical distance between adsorbed Au atom and the topmost silicon atom plane of 1.59 Å, binding energy of 4.76 eV and vertical vibrational mode of87cm–1. The photoemission spectra were calculated and compared with the experimental spectra. Although the calculations suggest that Au atom can not penetrate under the silicon surface, the possibility has been shown for Au atom to replace the surface silicon atom upon the adsorption. The results of the calculations are discussed in connection with the existing models for initial stages of the Au growth on the Si(111) surface.
Suggested Citation
N.V. Dobrodey & L.I. Ziegelman & V.G. Zavodinsky & I.A. Kuyanov, 1994.
"NONEMPIRICAL CLUSTER STUDY OF THE AuADSORPTION ON THE Si(111) SURFACE,"
Surface Review and Letters (SRL), World Scientific Publishing Co. Pte. Ltd., vol. 1(02n03), pages 273-284.
Handle:
RePEc:wsi:srlxxx:v:01:y:1994:i:02n03:n:s0218625x94000278
DOI: 10.1142/S0218625X94000278
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