IDEAS home Printed from https://ideas.repec.org/a/wsi/ijmpcx/v29y2018i10ns0218625x19500070.html
   My bibliography  Save this article

INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz–SILICON WAFER

Author

Listed:
  • M. MAOUDJ

    (Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon–Alger, BP N∘140, Les 07 Merveilles–Algiers, Algeria†Department of Electronics, Faculty of Technology, Ferhat Abbas University, Setif, Algeria)

  • D. BOUHAFS

    (Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon–Alger, BP N∘140, Les 07 Merveilles–Algiers, Algeria)

  • N. BOUROUBA

    (#x2020;Department of Electronics, Faculty of Technology, Ferhat Abbas University, Setif, Algeria)

  • A. EL AMRANI

    (Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon–Alger, BP N∘140, Les 07 Merveilles–Algiers, Algeria)

  • R. BOUFNIK

    (Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon–Alger, BP N∘140, Les 07 Merveilles–Algiers, Algeria)

  • M. BEROUAKEN

    (Research Center in Semiconductor Technology for Energetic (CRTSE), 02 Bd. Frantz Fanon–Alger, BP N∘140, Les 07 Merveilles–Algiers, Algeria)

  • A. HAMIDA-FERHAT

    (#x2020;Department of Electronics, Faculty of Technology, Ferhat Abbas University, Setif, Algeria)

Abstract

The chemical etching of the surface of silicon wafers is a critical step in the manufacturing process of all semiconductor devices. In this contribution, we investigate the effect of alkaline etching on minority carrier lifetime and interface-states density (Dit) of silicon wafers intended to be used as solar cell substrates. After alkali treatment, the surface morphology was analyzed using scanning electron microscopy (SEM) and UV-visible-NIR optical spectroscopy. Besides and as electrical characterizations, the minority charge carrier lifetime (τn) was measured by the Quasi-Steady State Photoconductance technique (QSSPC), and the Electrochemical Impedance Spectroscopy was used to evaluate Dit. These results were correlated with the surface recombination velocity (SRV) calculated by fitting the experimental data to the theory. The results of characterization showed a lower SRV and a higher apparent lifetime (τapp) obtained with 23wt.% KOH etching as compared to those obtained with 30wt.% NaOH; viz. 825cm⋅s−1 against 1500cm.s−1 and 32μs against 23μs, respectively. These findings were corroborated by Dit measurements which gave 1.55×1011ev−1cm−2 for KOH treatment and 5.67×1012ev−1cm−2 for NaOH treatment.

Suggested Citation

  • M. Maoudj & D. Bouhafs & N. Bourouba & A. El Amrani & R. Boufnik & M. Berouaken & A. Hamida-Ferhat, 2018. "INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz–SILICON WAFER," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 25(07), pages 1-7, October.
  • Handle: RePEc:wsi:ijmpcx:v:29:y:2018:i:10:n:s0218625x19500070
    DOI: 10.1142/S0218625X19500070
    as

    Download full text from publisher

    File URL: http://www.worldscientific.com/doi/abs/10.1142/S0218625X19500070
    Download Restriction: Access to full text is restricted to subscribers

    File URL: https://libkey.io/10.1142/S0218625X19500070?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:wsi:ijmpcx:v:29:y:2018:i:10:n:s0218625x19500070. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Tai Tone Lim (email available below). General contact details of provider: http://www.worldscinet.com/ijmpc/ijmpc.shtml .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.