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Electron States in Static Disordered Systems and Fluid Systems

Author

Listed:
  • L. CRUZEIRO-HANSSON

    (Dept. Crystallography, Birkbeck College, Malet St., London WC1E 7HX, U.K.)

  • J.O. BAUM

    (Rutherford Appleton Lab, Chilton, Didcot, Oxfordshire OX11 0QX, U.K.)

  • J.L. FINNEY

    (Rutherford Appleton Lab, Chilton, Didcot, Oxfordshire OX11 0QX, U.K.)

Abstract

The path integral formulation of quantum statistical mechanics is used to study the effect of structural disorder on the electron states at finite temperatures. The following systems are investigated: an excess electron in a) a perfect hard spheres crystal, b) a hard spheres crystal with a vacancy and c) a hard spheres fluid. The localizing effect of a vacancy on the electron equals that of a fluid environment.

Suggested Citation

  • L. Cruzeiro-Hansson & J.O. Baum & J.L. Finney, 1991. "Electron States in Static Disordered Systems and Fluid Systems," International Journal of Modern Physics C (IJMPC), World Scientific Publishing Co. Pte. Ltd., vol. 2(01), pages 305-309.
    • Handle: RePEc:wsi:ijmpcx:v:02:y:1991:i:01:n:s012918319100038x
    DOI: 10.1142/S012918319100038X
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