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Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping

Author

Listed:
  • Xi Fu

    (Hunan University of Science and Engineering
    Jishou University)

  • Jian Lin

    (Jishou University)

  • Wenhu Liao

    (Jishou University)

  • Jiyuan Guo

    (Jiangsu University of Science and Technology)

  • Xiaowu Li

    (Hunan University of Science and Engineering)

Abstract

In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B2C4P2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B2C4P2 photodetector. Additionally, the armchair B2C4P2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B2C4P2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices. Graphical abstract Robust photogalvanic effect (PGE) phenomena and very high extinction ratio have been produced in the armchair B2C4P2 photodetector with the vacancies and substitution-doping included.

Suggested Citation

  • Xi Fu & Jian Lin & Wenhu Liao & Jiyuan Guo & Xiaowu Li, 2024. "Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 97(1), pages 1-8, January.
    • Handle: RePEc:spr:eurphb:v:97:y:2024:i:1:d:10.1140_epjb_s10051-023-00632-w
    DOI: 10.1140/epjb/s10051-023-00632-w
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