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Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

Author

Listed:
  • Paziljon Baymatov

    (Namangan State University)

  • Bakhrom Abdulazizov

    (Namangan State University)

  • Makhmudjon Tokhirjonov

    (Namangan State University)

Abstract

The paper presents the results of studying the nature of the energy levels of an electron in a quantum well of heterostructures AlAs/InxGa1−xAs/AlAs containing a thin InAs nanolayer. The dependences of these energy levels on the thickness En(b) of the InAs layer are analysed by numerical and analytical methods. An analytical formula for the dependence En(b) is obtained in the model of an infinitely deep well. The dependence of the energy levels on the thickness b of the InAs nanolayer found in the model of parabolic bands turned out to be strong and complex. In the model of nonparabolic bands, due to the growth of the electron mass with respect to energy, the number of energy levels in the well increased, and the En(b) dependences were noticeably suppressed. The nature and causes of these regularities are analysed. Graphical abstract Conduction band profile of AlAs/Inx Ga1−x As/InAs/InxGa1−xAs/AlAs (x = 0.53) heterostructures

Suggested Citation

  • Paziljon Baymatov & Bakhrom Abdulazizov & Makhmudjon Tokhirjonov, 2023. "Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 96(8), pages 1-7, August.
    • Handle: RePEc:spr:eurphb:v:96:y:2023:i:8:d:10.1140_epjb_s10051-023-00586-z
    DOI: 10.1140/epjb/s10051-023-00586-z
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