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Photoluminescence properties of type I InAs/InGaAsSb quantum dots

Author

Listed:
  • Afef Ben Mansour

    (Université de Carthage
    Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis)

  • Rihab Sellami

    (Université de Carthage
    Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis)

  • Adnen Melliti

    (Université de Carthage
    Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis)

  • Abdelmajid Salhi

    (KACST
    Qatar Environment and Energy Research Institute (QEERI), Hamad Bin Khalifa University)

Abstract

This paper presents a detailed study on the effect of the strain reducing layer (SRL) made with InGaAsSb on the photoluminescence (PL) of type I InAs/GaAs quantum dots (QDs). For the InGaAsSb SRL, measurement results have shown that the emission wavelength reaches 1.4 µm for the ground state (GS) and 1.33 µm for the first excited state (ES) at room temperature (RT). Besides, the investigation of the temperature-dependent PL shows the strong effect of SRL in reducing the barrier potential at the interface between the capping layer and QDs, and increasing the carrier injection efficiency inside the QDs, at low temperature, leading to an enhancement of the luminescence of this sample. Furthermore, the increase of excitation density from 40 to 200 W/cm2 for all temperature between 10 and 220 K reveals that incorporating InGaAsSb SRL in InAs/GaAs QDs is of great importance on the understanding of some devices operating at room temperature or higher. Graphical Abstract Evolution of the integrated PL intensity of the GS and ES transitions vs. excitation density of InGaAsSb quantum dots for different temperatures.

Suggested Citation

  • Afef Ben Mansour & Rihab Sellami & Adnen Melliti & Abdelmajid Salhi, 2022. "Photoluminescence properties of type I InAs/InGaAsSb quantum dots," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 95(6), pages 1-10, June.
    • Handle: RePEc:spr:eurphb:v:95:y:2022:i:6:d:10.1140_epjb_s10051-022-00357-2
    DOI: 10.1140/epjb/s10051-022-00357-2
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