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Spin and valley dependent line-type resonant peaks in electrically and magnetically modulated silicene quantum structures

Author

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  • Yuanshan Zhang

    (Tsinghua University)

  • Yong Guo

    (Tsinghua University
    Collaborative Innovation Center of Quantum Matter)

Abstract

A barrier with a tunable spin-valley dependent energy gap in silicene could be used as a spin and valley filter. Meanwhile, special resonant modes in unique quantum structure can act as energy filters. Hence we investigate valley and spin transport properties in the potential silicene quantum structures, i.e., single ferromagnetic barrier, single electromagnetic barrier and double electric barriers. Our quantum transport calculation indicates that quantum devices of high accuracy and efficiency (100% polarization), based on modulated silicene quantum structures, can be designed for valley, spin and energy filtering. These intriguing features are revealed by the spin, valley dependent line-type resonant peaks. In addition, line-type peaks in different structure depend on spin and valley diversely. The filter we proposed is controllable by electric gating.

Suggested Citation

  • Yuanshan Zhang & Yong Guo, 2017. "Spin and valley dependent line-type resonant peaks in electrically and magnetically modulated silicene quantum structures," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 90(2), pages 1-6, February.
    • Handle: RePEc:spr:eurphb:v:90:y:2017:i:2:d:10.1140_epjb_e2016-70594-3
    DOI: 10.1140/epjb/e2016-70594-3
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    Keywords

    Mesoscopic and Nanoscale Systems;

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