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Superconductor-insulator transition tuned by annealing in Bi-film on top of Co-clusters

Author

Listed:
  • W. Herrera
  • I. Dinola
  • M. Continentino
  • H. Micklitz
  • Y. Xing
  • M. Fontes
  • E. Baggio-Saitovitch

Abstract

We deposited amorphous Bi films with a thickness between 3 and 6.5 nm at 4.2 K on top of previously deposited Co clusters having a mean size of ∼4.5 nm. The Co cluster layers thickness was between 2.3 and 5 nm. In-situ electrical transport measurements were performed between 2 and 100 K. Measurements on as-prepared samples having a Bi layer thickness of 3.0 nm show hopping (tunneling) conductivity as σ(T)=σ 0 exp[−(T 0 /T) 1/2 ] above the superconducting transition temperature T C and re-entrance behavior again with hopping (tunneling) conductivity below T C . Annealing of films having a Bi layer thickness of 5.5 nm results in a decrease of resistivity, with variable-range hopping conduction behavior as σ(T)=σ 0 exp[−(T 0 /T) 1/3 ]. Quite different are the findings for films having a Bi layer thickness of 6.5 nm: annealing of these films results in a power-law behavior as σ(T)=σ 0 T α with α=2/3, indicating that these films are close to a quantum critical point separating superconducting and insulating phases. A phase diagram including all experimental observations is proposed. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Suggested Citation

  • W. Herrera & I. Dinola & M. Continentino & H. Micklitz & Y. Xing & M. Fontes & E. Baggio-Saitovitch, 2013. "Superconductor-insulator transition tuned by annealing in Bi-film on top of Co-clusters," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 86(12), pages 1-6, December.
    • Handle: RePEc:spr:eurphb:v:86:y:2013:i:12:p:1-6:10.1140/epjb/e2013-40337-3
    DOI: 10.1140/epjb/e2013-40337-3
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    Solid State and Materials;

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