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High performance silicene nanoribbon field effect transistors with current saturation

Author

Listed:
  • Hong Li
  • Lu Wang
  • Qihang Liu
  • Jiaxin Zheng
  • Wai-Ning Mei
  • Zhengxiang Gao
  • Junjie Shi
  • Jing Lu

Abstract

We investigate field effect transistors (FETs) based on semiconducting armchair-edged silicene nanoribbons (ASiNRs) by using ab initio quantum transport calculations. These FETs have high performance with an I on /I off ratio of over 10 6 and a subthreshold swing as small as 90 mV/decade. Impressively, the output characteristic shows a saturation behavior. The drain-current saturation is an advantage with respect to device speed, but it’s usually absent in carbon-based (e.g., graphene, graphene nanoribbons, carbon nanotubes, and organic single-molecule) FETs. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2012

Suggested Citation

  • Hong Li & Lu Wang & Qihang Liu & Jiaxin Zheng & Wai-Ning Mei & Zhengxiang Gao & Junjie Shi & Jing Lu, 2012. "High performance silicene nanoribbon field effect transistors with current saturation," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 85(8), pages 1-6, August.
    • Handle: RePEc:spr:eurphb:v:85:y:2012:i:8:p:1-6:10.1140/epjb/e2012-30220-2
    DOI: 10.1140/epjb/e2012-30220-2
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    Solid State and Materials;

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