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Formation of sharp metal-organic semiconductor interfaces: Ag and Sn on CuPc

Author

Listed:
  • V. Yu. Aristov
  • O. V. Molodtsova
  • V. M. Zhilin
  • Yu. A. Ossipyan
  • D. V. Vyalikh
  • B. P. Doyle
  • S. Nannarone
  • M. Knupfer

Abstract

A detailed investigation of the chemistry and electronic structure during the formation of the interfaces between thin films of the archetypal organic molecular semiconductor copper phthalocyanine (CuPc) and Ag or Sn deposited on it was performed using photoemission and near-edge X-ray absorption spectroscopies with synchrotron light. Our study demonstrates the formation of sharp, abrupt interfaces, a behavior which is of particular importance for applications in organic devices. Moreover, for Ag on CuPc we demonstrate that this interface is free from any reaction, whereas there is slight interface reaction for Sn/CuPc. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Suggested Citation

  • V. Yu. Aristov & O. V. Molodtsova & V. M. Zhilin & Yu. A. Ossipyan & D. V. Vyalikh & B. P. Doyle & S. Nannarone & M. Knupfer, 2007. "Formation of sharp metal-organic semiconductor interfaces: Ag and Sn on CuPc," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 57(4), pages 379-384, June.
    • Handle: RePEc:spr:eurphb:v:57:y:2007:i:4:p:379-384
    DOI: 10.1140/epjb/e2007-00192-5
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