IDEAS home Printed from https://ideas.repec.org/a/spr/eurphb/v56y2007i3p217-222.html
   My bibliography  Save this article

Residual strain measurements in InGaAs metamorphic buffer layers on GaAs

Author

Listed:
  • V. Bellani
  • C. Bocchi
  • T. Ciabattoni
  • S. Franchi
  • P. Frigeri
  • P. Galinetto
  • M. Geddo
  • F. Germini
  • G. Guizzetti
  • L. Nasi
  • M. Patrini
  • L. Seravalli
  • G. Trevisi

Abstract

This work deals with the strain relaxation mechanism in InGaAs metamorphic buffers (MBs) grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is measured by using Raman scattering and X-ray diffraction, both in Reciprocal Space Map and in single ω-2θ scan modes (ω and θ being the incidence angles on the sample surface and on the scattering planes, respectively). By relating the GaAs-like longitudinal optical phonon frequency ω LO of InGaAs MBs to the in-plane residual strain ε measured by means of photoreflectance (PR), the linear ε-vs.-ω LO working curve is obtained. The results of Raman and XRD measurements, as well as those obtained by PR, are in a very satisfactory agreement. The respective advantages of the techniques are discussed. The measurements confirm that strain relaxation depends on the thickness t of the buffer layer following a ~t -1/2 power law, that can be explained by an energy-balance model. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Suggested Citation

  • V. Bellani & C. Bocchi & T. Ciabattoni & S. Franchi & P. Frigeri & P. Galinetto & M. Geddo & F. Germini & G. Guizzetti & L. Nasi & M. Patrini & L. Seravalli & G. Trevisi, 2007. "Residual strain measurements in InGaAs metamorphic buffer layers on GaAs," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 56(3), pages 217-222, April.
    • Handle: RePEc:spr:eurphb:v:56:y:2007:i:3:p:217-222
    DOI: 10.1140/epjb/e2007-00105-8
    as

    Download full text from publisher

    File URL: http://hdl.handle.net/10.1140/epjb/e2007-00105-8
    Download Restriction: Access to full text is restricted to subscribers.
    File URL: https://libkey.io/10.1140/epjb/e2007-00105-8?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Beata Ściana & Wojciech Dawidowski & Damian Radziewicz & Joanna Jadczak & Mari Cruz López-Escalante & Victor González de la Cruz & Mercedes Gabás, 2022. "Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE," Energies, MDPI, vol. 15(9), pages 1-11, April.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:spr:eurphb:v:56:y:2007:i:3:p:217-222. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.springer.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.